Article ID Journal Published Year Pages File Type
1545183 Physica E: Low-dimensional Systems and Nanostructures 2011 6 Pages PDF
Abstract
► We investigate the electrical properties and thermal stability of the films. ► HfSiON films have superior thermal stability compared to HfSiO films. ► The electrical performance had a larger improvement through nitrogen incorporation.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
Improvement of thermal stability and electrical performance in HfSiO gate dielectrics by nitrogen incorporation
Authors
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