| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545196 | Physica E: Low-dimensional Systems and Nanostructures | 2011 | 5 Pages |
Metallic nanogap electrode shows great potential in many fields. However, its fabrication is still a highly challenging task because it goes beyond the capability of many nanofabrication technologies. We demonstrate a nanogap formation method in metallic film surface using femtosecond laser rear side irradiation. In this method, laser beam passes through the transparent substrate, heating the film material adjacent to film/substrate interface; ultrafast heating induced thermal shock and stress confinement in an enclosed space contribute to the formation of nanogap structures. Experimental results indicate that laser fluence is a crucial process parameter influencing the formation of structures in rear side irradiation. When it is higher than the ablation threshold in a proper range, nanogap can be formed in irradiation region definitely. Length and direction controlled nanogaps with width of sub-50 nm are realized in our experiments for the first time, which shows nonlinear dependence characteristic of direct tunneling. Compared with other nanogap fabrication techniques, this room temperature nanogap fabrication method has the advantages of simple process, easy operation and cost-efficiency.
Graphical abstractWe proposed a novel fabrication method for nanogap electrodes by femtosecond laser rear-side irradiation. Length and direction controlled nanogaps show nonlinear dependence characteristic of tunneling.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Fabrication of metallic nanogap electrode using femtosecond laser rear side irradiation method is proposed. ► When laser fluence is higher than ablation threshold in a proper range, nanogap can be formed in irradiation region definitely. ► Length and direction controlled nanogaps with width of sub-50 nm are realized in our experiments.
