| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545227 | Physica E: Low-dimensional Systems and Nanostructures | 2011 | 4 Pages |
Based on the effective-mass approximation and variational approach, exciton states confined in self-formed wurtzite InxGa1−xN/GaN quantum dots are investigated theoretically, in which the three-dimensional confinement of electron–hole pair and the strong built-in electric field are considered. The relationship between exciton states and structural parameters of quantum dots with height L and In composition x is studied. Our results show that the maximum of exciton binding energy is obtained at a height of about L=1.4 nm for different In compositions x. The exciton binding energy, emission wavelength and oscillator strength depend sensitively on the height L and In composition x in the InxGa1−xN active layer. The calculated emission wavelength is in good agreement with the experimental measurements for different InxGa1-xN quantum dots.
Research highlights► The strong built-in electric field is estimated to be in the order of MV/cm. ► The maximum of binding energy is obtained at about L=1.4 nm for different In compositions x. ► The exciton states depend sensitively on structural parameters and In composition x. ► Choosing the suitable structural parameters and In composition x is important.
