| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545231 | Physica E: Low-dimensional Systems and Nanostructures | 2011 | 4 Pages |
A GaN nanostructure based temperature sensor has been modeled using the minority-carrier exclusion theory. The model takes into account the effects of temperature, carrier concentrations and electric field on carrier mobilities. The model also consists of different carrier scattering mechanisms such as phonon and natural ionized scattering. The calculation results show that the resistance of modeled GaN nanostructure based temperature sensor is strongly dependent on the sensor structural parameters such as doping density and device size.
Research highlights► A GaN nanostructure based temperature sensor has been modeled using the minority-carrier exclusion theory. ► The model takes into account the effects of temperature, carrier concentrations and electric field on carrier mobilities. ► The model also consists of different carrier scattering mechanisms such as phonon and natural ionized scattering. ► The calculation results show that the resistance of modeled GaN nanostructure based temperature sensor is strongly dependent on the sensor structural parameters such as doping density and device size.
