Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1545275 | Physica E: Low-dimensional Systems and Nanostructures | 2009 | 4 Pages |
Abstract
We investigate the effect of quantum size on the inelastic Coulomb scattering rate within RPA in GaAs-based quantum layers at low temperatures. We also take into account the short-range interaction through Hubbard approximation and compare the results with those obtained from RPA. It is found that the inelastic scattering rate increases by increasing the well width and this effect is slightly stronger at higher temperatures. We also obtain the same behavior within the Hubbard approximation although the scattering rate takes the higher values than the RPA ones. Furthermore, our calculations show that the change in the inelastic scattering rate due to the change of well width is greater in RPA.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
T. Vazifehshenas, T. Salavati-fard,