| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545354 | Physica E: Low-dimensional Systems and Nanostructures | 2009 | 5 Pages |
Abstract
The mechanism of nickel-induced enhancement of photoluminescence (PL) in Si-rich SiO2 film has been investigated. Due to the increasing density of Si nanocrystals and decreasing decay rate of photoluminescence, the intensity of near-infrared emission from SiO1.56/Ni/Si samples was enhanced by a factor of 4 than that of SiO1.56/Si samples without the Ni interlayer after annealing at 1000 °C. Temperature-dependent PL spectra confirmed the quantum confinement effect as the origin of the luminescence transition in these two samples. The demonstration of light-emitting diodes based on SiO1.56/Ni/Si and SiO1.56/Si systems showed that the NiSi2-distribution in SiO1.56 film could improve the turn-on voltage and give an additional benefit to the electroluminescence efficiency.
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Authors
D.X. Li, Y. He, J.Y. Feng,