Article ID Journal Published Year Pages File Type
1545408 Physica E: Low-dimensional Systems and Nanostructures 2010 5 Pages PDF
Abstract
In this work we investigate the influence of Si and Ge doping on the electrostatic structure properties and NMR parameters of armchair model of the (4, 4) Aluminum nitride nanotubes (AlNNTs) with a 1-nm length and consisting of 32 Al and 32 N atoms.
Keywords
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
DFT study on influence of Si and Ge doping on the chemical shielding tensors in the armchair AlN nanotubes
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