| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545412 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 4 Pages |
Abstract
⺠Stable adsorption sites for a single Si atom adsorption on the outer surface of single-walled carbon nanotubes were studied in detail. ⺠Relative stability of equilibrium configurations above different CâC bonds cannot be judged only by the relative reactivity of the CâC bonds, due to the radial deformation of tube caused by adsorption of Si atom. This is contrary to the case of the adsorption of C and N. ⺠Energetically favorable diffusion paths were determined, which is crucial for the growth of silicon carbide nanotubes. No studies on this issue have been reported.
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Authors
Hongyu Zhang, Xuejuan Zhang, Mingwen Zhao, Zhenhai Wang,