Semiconductor nanotube in strong radial electrostatic field: Spectrum of carriers and interband transitions

►Semiconductor nanotube placed in strong radial electrostatic field. ►Electron and hole are located near the opposite walls of the tube in radial direction. ►The radial electrostatic field leads to explicit dependence of sample's optical properties from effective masses of charge careers. ►The threshold frequencies are defined by the geometrical parameters of the sample and by the intensity of radial field.