Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1545417 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 5 Pages |
Abstract
⺠The Rashba spin splitting can be introduced by the internal structure inversion asymmetry (SIA) of the AlxGa1âxAs/GaAs/AlyGa1âyAs/AlxGa1âx As step quantum well (QW) without electric field and magnetic field. ⺠The Al concentration in the barrier and in the step can dramatically affect the Rashba spin splitting induced by the internal SIA of the step QW, the Dresselhaus spin splitting and the anisotropy of the total spin splitting. ⺠The cooperation of the Al concentration in the barrier and in the step determines which effect, Rashba or Dresselhaus, dominates the total spin splitting.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Ya-Fei Hao,