| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545444 | Physica E: Low-dimensional Systems and Nanostructures | 2011 | 6 Pages |
Abstract
⺠I investigate the effect of uniaxial strain on the subthreshold swing of the CNTFET. ⺠I present a qualitative description of the quantum capacitance. ⺠The subthreshold swing strongly changes by applying uniaxial strain. ⺠The results show that the uniaxial strain can be used for the ultra-low power applications.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
R. Yousefi,