Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1545506 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 4 Pages |
Abstract
We investigate electron tunneling between two GaAs accumulation two-dimensional layers separated by an (AlGa)As barrier which is modulation-doped with donors. A Coulomb pseudogap suppresses electron tunneling at the Fermi level and is induced by a magnetic field applied perpendicular to the accumulation layers. By measuring the tunnel current as a function of magnetic field and bias voltage, we examine how the pseudogap is influenced by elastic scattering processes.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
V.G. Popov, O.N. Makarovskiy, V.T. Renard, J.-C. Portal,