| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545570 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 6 Pages |
Abstract
⺠The novel PtSi Schottky barrier diode (SBD) based on SiNWs is fabricated. ⺠The distinction between PtSi/SiNWs and PtSi/bulk Si structures is investigated. ⺠The Richardson plot is used to extract accurately the electrical parameters. ⺠The interfacial layer and the series resistance cause the non-ideal SBD.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Meiguang Zhu, Jian Zhang, Zhiliang Wang, Lijuan Wan, Xuejiao Chen,