| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545601 | Physica E: Low-dimensional Systems and Nanostructures | 2012 | 5 Pages |
We present a theoretical study of electron transport properties through boron-nitride nanotube (BNNT) and contrast them to those of carbon nanotube (CNT). The work is based on a tight-binding Hamiltonian model within the framework of a generalized Green's function technique and relies on the Landauer–Bütikker formalism as the basis for studying the current–voltage characteristic of this system. We use an armchair single-walled BNNT in the CNT/BNNT/CNT structure. We numerically compute the transport properties in terms of transmission and current–voltage characteristic. Our calculations show that the electron transport can open a conduction gap in the CNT/BNNT/CNT structure.
Graphical AbstractWe have investigated the electron transport properties through an armchair single-walled (n, n) boron-nitride nanotube (BNNT) in CNT/BNNT/CNT structure.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► We use the NEGF method and the tight-binding Hamiltonian model. ► We investigate the electronic density of states, transmission, and current–voltage. ► We use an armchair single-walled BNNT in the CNT/BNNT/CNT structure. ► Electron transport in the CNT/BNNT/CNT structure can open a conduction gap.
