| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545642 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 5 Pages |
Abstract
We introduce a new third generation of solar cell structure which inserts different-sized quantum dots in the active region of a p–i–n structure. Generating an intermediate band in the bandgap of the host material makes a good overlap with a part of solar spectrum. The effect of the recombination mechanisms on efficiency and current–voltage characteristics of this intermediate band solar cell is calculated. We deduce that the increase in recombination lifetime of the excited carriers can improve the characteristics of this structure. This result can be a route which helps us to take the effect on solar cell characteristics into consideration.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Nima Es’haghi Gorji, Hossein Movla, Foozieh Sohrabi, Ahmad Hosseinpour, Meisam Rezaei, Hassan Babaei,