Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1545649 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 4 Pages |
Abstract
We present a finite element method to simulate the strain field in InSb/GaSb quantum dots in the framework of anisotropic elasticity, before and after the onset of plastic relaxation. Taking the interaction between dislocation and free surface into consideration, the model directly calculates the residual strain in the dislocated system. Based on the energy balance between the two isolated states, the equilibrium critical size is determined. In the criterion, only the non-elastic dislocation core energy should be considered separately. The results are in satisfactory agreement with experimental data.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Han Ye, Pengfei Lu, Zhongyuan Yu, BoYong Jia, Hao Feng, Yumin Liu,