| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545722 | Physica E: Low-dimensional Systems and Nanostructures | 2009 | 4 Pages |
Abstract
We report the interplay between the anisotropic strain relaxation and the in-plane uniaxial magnetic anisotropy in a 5Â nm Fe film grown on GaAs (0Â 0Â 1) by molecular-beam epitaxy. Tetragonal distortion and in-plane anisotropic strain relaxation were accurately measured by synchrotron X-ray diffraction. A stronger coherence at the interface between Fe and GaAs is also observed in the annealed film. A competing model including magnetocrystalline anisotropy, interface anisotropy, and magnetoelastic anisotropy is proposed to characterize the in-plane magnetic anisotropy.
Related Topics
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Materials Science
Electronic, Optical and Magnetic Materials
Authors
J. Lu, P.F. Xu, Y.G. Zhu, H.J. Meng, L. Chen, W.Z. Wang, X.H. Zhang, J.H. Zhao, G.Q. Pan,