Article ID Journal Published Year Pages File Type
1545723 Physica E: Low-dimensional Systems and Nanostructures 2009 4 Pages PDF
Abstract
Low-voltage thin-film transistors (TFTs) with ZnO nanocrystal channel layers and mesoporous SiO2 gate dielectric are fabricated on glass substrates at room-temperature. The resulting n-type TFTs operate at a low voltage of 2.0 V. The equivalent field-effect electron mobility, current on/off ratio and subthreshold voltage swing is estimated to be 28.8 cm2 V−1 s−1, 3×106 and 84 mV/decade, respectively. The possible mechanism for low-voltage operation is discussed based on the electric double layer effect. Such room-temperature-processed low-voltage TFTs are very promising for low-power macroelectronics on temperature-sensitive substrates.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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