Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1545723 | Physica E: Low-dimensional Systems and Nanostructures | 2009 | 4 Pages |
Abstract
Low-voltage thin-film transistors (TFTs) with ZnO nanocrystal channel layers and mesoporous SiO2 gate dielectric are fabricated on glass substrates at room-temperature. The resulting n-type TFTs operate at a low voltage of 2.0Â V. The equivalent field-effect electron mobility, current on/off ratio and subthreshold voltage swing is estimated to be 28.8Â cm2Â Vâ1Â sâ1, 3Ã106 and 84Â mV/decade, respectively. The possible mechanism for low-voltage operation is discussed based on the electric double layer effect. Such room-temperature-processed low-voltage TFTs are very promising for low-power macroelectronics on temperature-sensitive substrates.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Y. Hu, A.X. Lu, L.P. Wang, H.C. Yu, Q. Wan,