Article ID Journal Published Year Pages File Type
1545778 Physica E: Low-dimensional Systems and Nanostructures 2010 4 Pages PDF
Abstract

High-resolution transmission electron microscopy has revealed the formation process of graphene layers on SiC (0 0 0 1). Initially, nucleation occurs at SiC steps, covering them with a few layers of graphene. These curved graphene layers stand almost perpendicularly on the lower terrace. Graphene subsequently grows over the terrace region. The growth is often pinned by lattice defects of the SiC substrate.

Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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