Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1545778 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 4 Pages |
Abstract
High-resolution transmission electron microscopy has revealed the formation process of graphene layers on SiC (0 0 0 1). Initially, nucleation occurs at SiC steps, covering them with a few layers of graphene. These curved graphene layers stand almost perpendicularly on the lower terrace. Graphene subsequently grows over the terrace region. The growth is often pinned by lattice defects of the SiC substrate.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
W. Norimatsu, M. Kusunoki,