| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545804 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 4 Pages |
Abstract
Based on the scanning tunneling microscopy (STM) techniques, we successfully completed a novel two-terminal electron transport measurement on individual zinc oxide (ZnO) nanotube. This method enabled us to set one of these two metal-semiconductor contacts as a point contact. In this system, we found ZnO nanotube exhibit reproducible polarized memory effect and electrical-pulse-induced resistance switching effect. We suggested a phenomenological model to explain the observed effects.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Peng Liu, Guangwei She, Wensheng Shi, Dongmin Chen,