Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1545806 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 4 Pages |
Abstract
Extending the scanning tunneling microscopy (STM) techniques, we have successfully developed a novel approach to make clean electrical contacts to individual semiconductor nanowires to form two-terminal devices for electron transport measurement. This versatile technique avoids contact problems often encountered in lithographically patterned devices due to contamination or damage from high energy electrons or ion beams. The devices made using present technique form reliable Schottky barriers at the semiconductor–metal contacts. Some measurement results based on this type of method will be shown.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Peng Liu, Weiwei Cai, Zhenzhong Wang, Dongmin Chen,