Article ID Journal Published Year Pages File Type
1545852 Physica E: Low-dimensional Systems and Nanostructures 2010 4 Pages PDF
Abstract

We investigated the spin–orbit interaction (SOI) in Al0.1In0.9Sb/Sn-doped InAs0.1Sb0.9 quantum wells (QWs) with different doping levels using the weak anti-localization effect in the magneto-resistance. The inelastic scattering time is close to the T−1 law predicted theoretically for electron–electron interaction, and the spin–orbit scattering time is temperature independent as expected for the D'yakonov–Perel mechanism. The carrier-density dependence of zero-field spin-splitting energy extracted from the fits of magneto-resistance was examined by the theoretical calculation. The result confirms that the Dresselhaus SOI is much larger than the Rashba SOI in our QWs. The dominance of the Dresselhaus term in SOI originates in the large weight factor of InSb-based alloy.

Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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