| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545927 | Physica E: Low-dimensional Systems and Nanostructures | 2012 | 4 Pages |
Bi nanowires with diameters of 20–200 nm, and length of up to more than 80 μm were synthesized by a simple solvothermal method. The as-prepared Bi nanowires were characterized by XRD, TEM, SAED and HRTEM. The laser power dependent Raman optical properties of the Bi nanowires were investigated for the first time. The result indicated that two first-order Raman peaks of the as-prepared nanowires are red-shifted 6 cm−1 compared with those of bulk Bi crystals after irradiation by laser with above 50% laser power. HRTEM investigations indicated that a Bi/oxide core/shell nanostructure was formed when the nanowires were irradiated by laser with above 50% laser power. A rational explanation for the red-shift of Raman peaks were discussed in detail according to phonon confinement model of an infinite crystal based on HRTEM results.
Graphical AbstractTwo first-order Raman peaks of Bi nanowires are red-shifted 6 cm−1 compared with bulk Bi crystals after irradiation by laser with above 50% laser power.Figure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Single-crystalline Bi nanowires were achieved by a simple solvothermal method. ► Optical properties of the nanowires were investigated by Raman spectroscopy. ► Effect of laser power on optical properties of Bi nanowires was investigated. ► First-order Raman peaks of nanowires are red-shifted under above 50% laser power. ► Phonon confinement model has been used to explain the red-shift of Raman peaks.
