| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545929 | Physica E: Low-dimensional Systems and Nanostructures | 2012 | 6 Pages |
The differential cross-section for an electron Raman scattering process in a semiconductor multiple GaAs/AlGaAs quantum well with the presence of an external uniform electric field is calculated for T=0 K. We assume single parabolic conduction band with one electron. The emission spectra and the effect for different electric field values are discussed. Singularities in the spectra are found and interpreted. The ERS studied here can be used to provide direct information about the electron band structure of these systems.
► Electron Raman scattering in GaAs/AlGaAs quantum well under uniform electric field for T=0 K. ► Singularities in the emission spectra for different electric field values are found. ► A transparent understanding of the energy subband structure of multiple quantum wells in the presence of electric field.
