| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545937 | Physica E: Low-dimensional Systems and Nanostructures | 2012 | 7 Pages |
Abstract
⺠We present the simulator of single electron transistor (SET) based on ISIS structure. ⺠In the calculations we use: 3D Poisson equation solution method and Green's function method. ⺠The model is realized by use the hybrid boundary and finite difference elements method. ⺠The computer program is realized in C++. ⺠We present results: 3D potential, quantum conductance and current-voltage characteristic.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
M. MÄ
czka, G. HaÅdaÅ,