| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545951 | Physica E: Low-dimensional Systems and Nanostructures | 2012 | 4 Pages |
Abstract
⺠Radiative efficiency is studied in (In,Ga)N quantum well diodes with varying bias. ⺠Photoluminescence efficiency decreases, when the forward bias is very high. ⺠Decrease of PL is due to reduced e-h wave function overlap in the wells. ⺠Electroluminescence droop may be caused by this effect under the high bias.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
K. Soejima, M. Horiguchi, K. Ono, H. Jimi, A. Satake, K. Fujiwara,