| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1545990 | Physica E: Low-dimensional Systems and Nanostructures | 2012 | 7 Pages |
Abstract
Optimal design applied to an AlξGa1−ξAsAlξGa1−ξAs heterostructure tunnel diode is used to achieve a parametrically defined nonlinear current–voltage characteristic. The design predicts that a significant reduction in spurious frequency components from a switching RF mixer can be realized using a device that is less than 17 nm thick.
► Optimal design of tunnel diode nonlinear current–voltage characteristic. ► Nonlinear current–voltage characteristic improves RF mixer performance. ► Optimal design methodology may be applied to different semiconductor devices.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Kelly C. Magruder, A.F.J. Levi,