| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1546038 | Physica E: Low-dimensional Systems and Nanostructures | 2008 | 5 Pages |
Abstract
The effective electron Landé factor in GaAs-Ga1-xAlxAs rectangular quantum well wires, under magnetic fields applied along the wire axis, is studied by taking into account the non-parabolicity and anisotropy of the conduction band within the Ogg-McCombe effective Hamiltonian. Confinement effects on the electron wavefunctions are explored in order to evaluate its influence on the behavior of the effective Landé factor. Calculations for the electron g⥠factor in GaAs-Ga1-xAlxAs rectangular quantum well wires are compared with the previous theoretical results obtained for GaAs-Ga1-xAlxAs cylindrical quantum well wires. Such comparison clearly indicates the influence of the wire shape on the electron Landé factor in GaAs-Ga1-xAlxAs quantum well wires.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
F.E. López, E. Reyes-Gómez, L.E. Oliveira,