Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1546063 | Physica E: Low-dimensional Systems and Nanostructures | 2009 | 5 Pages |
Abstract
Carbon nanotube field-effect transistors (CNTFETs) can be fabricated with Ohmic- or Schottky-type contacts. We focus here on Ohmic CNTFETs. The CNTFETs suffer from band-to-band tunneling which in turn causes the ambipolar conduction. In this paper, to suppress the ambipolar behavior of CNTFETs and improve the performance of these devices, we have proposed application of symmetric double-halo (DH)-doping in CNTFETs. In this new structure, the source-side halo doping reduces the drain-induced barrier lowering (DIBL) and the drain-side halo reduces the band-to-band tunneling effect. Simulation results show in the DH-CNTFET, subthreshold swing below the 60Â mV/decade conventional limit can be achieved. Also it decreases significantly the leakage current and drain conductance and increases on-off current ratio and voltage gain as compared to conventional CNTFET.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Zahra Arefinia,