| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1546065 | Physica E: Low-dimensional Systems and Nanostructures | 2009 | 5 Pages |
Abstract
Thin InAs epilayers were grown on GaAs(1 0 0) substrates exactly oriented and misoriented toward [1 1 1]A direction by atmospheric pressure metalorganic vapor phase epitaxy. InAs growth was monitored by in situ spectral reflectivity. Structural quality of InAs layers were studied by using high-resolution X-ray diffraction. No crystallographic tilting of the layers with respect to any kind of these substrates was found for all thicknesses. This result is discussed in terms of In-rich growth environment. InAs layers grown on 2° misoriented substrate provide an improved crystalline quality. Surface roughness of InAs layers depend on layer thickness and substrate misorientation.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
H. Ben Naceur, I. Moussa, O. Tottereau, A. Rebey, B. El Jani,