Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1546073 | Physica E: Low-dimensional Systems and Nanostructures | 2009 | 5 Pages |
Abstract
In-doped ZnO (ZnO:In) transparent conductive thin films were deposited on glass substrates by RF magnetron sputtering. The effect of substrate temperature on the structural, electrical and optical properties of the ZnO:In thin films was investigated. It was found that higher temperature improves the crystallinity of the films and promotes In substitution easily. ZnO:In thin films with the best crystal quality were fabricated at 300 °C, which exhibit a larger grain size of 29 nm and small tensile strain of 0.9%. The transmittance of all the films was revealed to be over 85% in the visible range independence of the substrate temperatures and the lowest resistivity of ZnO:In thin films is 2.4×10−3 Ω cm.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
L.P. Peng, L. Fang, X.F. Yang, H.B. Ruan, Y.J. Li, Q.L. Huang, C.Y. Kong,