Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1546078 | Physica E: Low-dimensional Systems and Nanostructures | 2009 | 7 Pages |
Abstract
The effect of laser field on the binding energy in a GaAs/Ga11âxAlxAs quantum well within the single band effective mass-approximation is investigated. Exciton binding energy is calculated as a function of well width with the renormalization of the semiconductor gap and conduction valence effective masses. The calculation includes the laser dressing effects on both the impurity Coulomb potential and the confinement potential. The valence-band anisotropy is included in our theoretical model. The 2D Hartree-Fock spatial dielectric function and the polaronic effects have been employed in our calculations. We investigate that reduction of binding energy in a doped quantum well due to screening effect and the intense laser field leads to semiconductor-metal transition.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
N. Radhakrishnan, A. John Peter,