| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1546114 | Physica E: Low-dimensional Systems and Nanostructures | 2008 | 10 Pages |
The differential cross-section for an electron Raman scattering (ERS) process, taking into account or not the presence of one phonon in a semiconductor asymmetrical multiple quantum well, is calculated for T=0 K. We present a description of the confined phonon modes, considering the Fröhlich interaction in a GaAs/AlxGa1−xAs system. We assume single parabolic conduction band with one electron. The emission spectra are discussed for different scattering configurations and the selection rules for the processes are also studied. Singularities in the spectra are found and interpreted. The ERS studied here can be used to provide direct information about the electron and phonon band structure of these systems, and give us information about the interband transitions.
