Effect of substrate temperature on growth process of GaAs on Si(1 1 0) vicinal surface studied by reflection high-energy electron diffraction

Effect of substrate temperature on growth process were studied for GaAs on Si(1 1 0) vicinal surface by reflection high-energy electron diffraction. At the substrate temperature of 473 K, three-dimensional islands of misoriented GaAs are formed on the vicinal surface. At 573 K, three-dimensional GaAs islands with low density epitaxially grow at the step edges of the vicinal surface. At 673 K, two-dimensional GaAs layer flattens the vicinal surface. The kinetics of Ga adatoms diffusing on the vicinal surface can explain the change in the growth process, which depends on the substrate temperature.