Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1546187 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 6 Pages |
In the present work, We calculate the donor binding energy for a V-groove GaAs/AlxGa1−xAsGaAs/AlxGa1−xAs quantum wire using a variational procedure within the effective mass approximation. We present a relation for the position-dependent effective mass in V-groove quantum wire which is a function of wire parameters. Calculations are presented with both constant effective mass and position-dependent effective masses for different dimensions of ridge quantum wire. We find that the position-dependent effective mass plays an important effect in the binding energy of the donor impurity in a ridge quantum wire. Also, we observe that the position-dependent effective mass in x-direction depends on all wire parameters, but in y-direction it depends on only one wire parameter.