Article ID Journal Published Year Pages File Type
1546188 Physica E: Low-dimensional Systems and Nanostructures 2010 4 Pages PDF
Abstract

Gold–strontium titanate (Au–STO) Schottky diode is fabricated using pulsed laser deposition technique. The current–voltage characteristics of the device show non-linear behavior. The junction parameters such as ideality factor, barrier height, and series resistance are calculated using Cheung and Norde's methods. The effect of temperature on diode parameters is studied in details. It is observed that the barrier height varies almost linearly with temperature and the values increase from 0.39 to 0.72 eV in temperature range 150–300 K. The ideality factor decreases from 18 to 3 with increase in temperature from 150 to 300 K. High ideality factor suggests formation of non-ideal Schottky junction between gold and STO.

Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Authors
, , ,