| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1546193 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 4 Pages |
Abstract
Catalyst-free InP nanowires were grown on Si (1Â 0Â 0) substrates by metal-organic chemical vapor deposition. Morphology, crystal structure, photoluminescence, and Raman scattering properties of the nanowires were investigated. Most nanowires are long and straight; the angles between the nanowires and the Si substrate are diverse. The photoluminescence peak shows blue-shift from the band gap energy of bulk InP. Both the blue-shift of photoluminescence peak and the full width at half-maximum of photoluminescence spectrum increase with decreasing nanowires growth temperature. Due to laser-induced heating, the TO and LO phonon peaks of the nanowires reveal downshift and asymmetric broadening compared with those of bulk InP at room temperature.
Keywords
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Shuzhen Yu, Guoqing Miao, Yixin Jin, Ligong Zhang, Hang Song, Hong Jiang, Zhiming Li, Dabing Li, Xiaojuan Sun,