| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1546228 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 5 Pages |
Abstract
An analytical expression is derived for the conductance modulation of a ballistic two-dimensional Datta–das spin field effect transistor (SPINFET) as a function of gate voltage. Using this expression, we show that the recently observed conductance modulation in a two-dimensional SPINFET structure does not match the theoretically expected result very well. This calls into question the claimed demonstration of the SPINFET and underscores the need for further careful investigation.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
P. Agnihotri, S. Bandyopadhyay,