Article ID Journal Published Year Pages File Type
1546253 Physica E: Low-dimensional Systems and Nanostructures 2008 5 Pages PDF
Abstract
The impurity ground state binding energy in cubic and cylindrical GaAs/AlAs quantum dots has been calculated using a variational procedure within the effective mass approximation. We exploit the impurity ground state energy under an external electric field strongly affected by the anisotropy of the quantum dots more than their shapes.
Keywords
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
The role of confinement and shape on the binding energy of an electron in a quantum dot
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