| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1546356 | Physica E: Low-dimensional Systems and Nanostructures | 2011 | 6 Pages |
Abstract
⺠We propose a novel silicon on insulator lateral double diffused MOSFET. ⺠The buried insulator layer under the active region consists of two materials. ⺠The proposed structure is called dual material buried insulator SOI-LDMOSFET. ⺠We demonstrate that heat dissipation and self-heating effects can be improved. ⺠Results show that silicon nitride is a suitable alternative as buried insulator.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Ali A. Orouji, Morteza Rahimian,