| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1546379 | Physica E: Low-dimensional Systems and Nanostructures | 2006 | 7 Pages |
Abstract
We investigate the effects of external electric field-induced Rashba spin–orbit interaction (SOI) on the spin-dependent resonant tunneling through ZnSe/Zn1−xMnxSe heterostructure with double paramagnetic layers in the presence of a magnetic field. Our investigations show a four-fold enhancement of the polarization of the spin-dependent current densities due to the electric field-induced Rashba SOI. These features could be used in the design and fabrication of spin-dependent microelectronic and optoelectronic devices.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
K. Gnanasekar, K. Navaneethakrishnan,