Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1546471 | Physica E: Low-dimensional Systems and Nanostructures | 2010 | 4 Pages |
Abstract
We extend previous transport calculations performed on a single-electron transistor (SET) based upon a semiconductor quantum dot (QD) doped with a single Mn ion (which behaves as a quantum nanomagnet) by calculating the stationary fluctuations of the current, or shot noise, of hole transport through the SET. Our results show that the zero-frequency shot noise is determined by the magnetic state of the QD. In particular, we find super-Poissonian noise in a region of bias and gate voltages where the competing dynamics between slow and fast channels results in bunching.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
L.D. Contreras-Pulido, J. Fernández-Rossier, R. Aguado,