Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1546559 | Physica E: Low-dimensional Systems and Nanostructures | 2008 | 4 Pages |
Abstract
We grow InGaAs quantum dot (QD) at low growth rate with 70 times insertion of growth interruption in MBE system. It is found that because of the extreme growth condition, QDs exhibit a thick wetting layer, large QD height value and special surface morphology which is attributed to the In segregation effect. Temperature dependence of photoluminescence measurement shows that this kind of QDs has a good thermal stability which is explained in terms of a “group coupling” model put forward by us.
Keywords
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
L.K. Yu, B. Xu, Z.G. Wang, P. Jin, C. Zhao, W. Lei, J. Sun, L.J. Hu,