| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1546576 | Physica E: Low-dimensional Systems and Nanostructures | 2008 | 6 Pages |
Abstract
We report on the photoluminescence (PL) imaging of GaAs quantum dots (QDs) formed by islands of quantized thicknesses in a 2Â nm thick Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As quantum well (QW) by means of near-field scanning optical microscopy. Discrete spectra associated with the QDs are observed and studied. Individual QDs are imaged with a resolution of 150Â nm. Energy degeneracy which is sometimes observed between nearby QDs suggests the possibility of quantum mechanically coupled dots. Constraints on the observation of coupling are discussed.
Related Topics
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Materials Science
Electronic, Optical and Magnetic Materials
Authors
P.W. Kolb, H.D. Drew,