| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1546621 | Physica E: Low-dimensional Systems and Nanostructures | 2011 | 4 Pages |
Binding energy is computed as a function of well width for ground and 2p± like states of a hydrogenic donor in a GaAs/GaxIn1−xP/GaAs quantum well with a mass anisotropy parameter. The donor 1s–2p± transition energy is observed for different well widths. Charged donor exciton binding energy is calculated using a two-parametric trial wavefunction, with the central cell corrections. They are computed within the framework of single band effective mass approximation, by means of a variational approach. The interband emission energy is also studied as a function of well width with and without the central cell corrections. The results show that (i) the donor exciton binding energy increases as well width decreases (ii) the central cell correction enhances the exciton binding energy and (iii) the interband emission energy decreases monotonically as well width increases. Our results are in good agreement with the recent published results.
► Binding energy is computed as a function of well width in a GaAs/GaxIn1−xP/GaAs quantum well. ► The donor 1s–2p± transition energy is observed with the central cell corrections. ► It has been done variationally within the single band effective mass approximation. ► The interband emission energy is also studied as a function of well width.
