| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1546635 | Physica E: Low-dimensional Systems and Nanostructures | 2008 | 5 Pages |
Abstract
Ga-doped zinc oxide (ZnO) (ZnO:Ga) nanocrystals were synthesized by the vapor-solidification method to investigate morphological and structural evolution induced by Ga-incorporation. Ga-content was controlled in the full composition range (0–100%). As the Ga-content increased, the shape of nanocrystals changed from tetrapod- to rod-type. Hard X-ray photoemission spectroscopy (HXPES) measurement indicates that highly Ga-doped uniphase ZnO:Ga nanocrystals without a serious deterioration of morphology are achieved, which strongly suggests the feasibility of Ga as a successful n-type dopant for ZnO-based nanocrystals.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
S.J. Oh, M.N. Jung, S.Y. Ha, S.G. Choi, J.J. Kim, K. Kobayashi, S.T. Lee, H.C. Lee, Y.R. Cho, T. Yao, J.H. Chang,