| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1546646 | Physica E: Low-dimensional Systems and Nanostructures | 2008 | 4 Pages |
Abstract
We have systematically investigated the magnetic properties of Si-doped (Ga,Mn)As films. When the Si content is low, both Curie temperature (TC) and carrier density (p) decrease compared with undoped (Ga,Mn)As, whereas a monotonic increase of TC and p is observed with further increase in the doping content of Si. We discuss the possible mechanism for the changes obtained by different Si doping contents and attribute the results to a competition between the existence of SiGa (Si substitutes for Ga site) that acts as a donor and SiI (Si interstitials) which is in favor of the improvement of ferromagnetism.
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Authors
W.Z. Wang, J.J. Deng, J. Lu, L. Chen, Y. Ji, J.H. Zhao,