| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1546752 | Physica E: Low-dimensional Systems and Nanostructures | 2008 | 5 Pages |
Abstract
We demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural investigations. The interband optical properties are compared to realistic 8-band k·p calculations of the electronic structure which fully account for strain and the structural properties of the QP. Using QPs embedded in n-i-p junctions we find wide range tunability of the interband spectrum and giant static dipole moments.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
H.J. Krenner, C. Pryor, J. He, J.P. Zhang, Y. Wu, C.M. Morris, M.S. Sherwin, P.M. Petroff,