| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1546790 | Physica E: Low-dimensional Systems and Nanostructures | 2008 | 4 Pages |
Abstract
We fabricated stacks of self-assembled InAs quantum dashes (QDashes) on InP(0 0 1) substrates using a new strain-compensation technique that suppresses degradation of crystal and optical properties by a large stacking number. A 30-layer stacked sample showed that the QDash structure and size uniformity were improved compared with those of a two-layer stacked sample. A stronger 1.5-μm photoluminescence emission was observed in the 30-layer stacked sample at room temperature, and this emission level is suitable for fiber-optic communication systems. In addition, optical anisotropy was observed in these samples.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Kouichi Akahane, Naokatsu Yamamoto, Shin-Ichiro Gozu, Akio Ueta, Masahiro Tsuchiya,