Boron doping effects on graphene susceptibility

Within the tight-binding Hamiltonian model and coherent potential approximation, the effects of doped boron concentration on the density of states and the temperature dependence of orbital magnetic susceptibility of graphene are studied. An expression of susceptibility based on the linear response theory and Green's function technique is used. It is found that when dopants are introduced, van-Hove singularities in the density of states are broadened. It is also shown that the susceptibility crossover of the doped system is appeared in the lower value of temperature in comparison with pure graphene.

Graphical AbstractThe aim of this research was to study the effects of finite boron-doped concentration on the density of states and susceptibility of graphene sheet. We used the tight-binding model Hamiltonian and the CPA formalism to calculate the average Green's function. We applied an expression of susceptibility in terms of Green's function and based on the linear response theory. When dopants are introduced the susceptibility crossover of the doped system is appeared in the lower value of temperature in comparison with pure graphene (As it is shown in figure). Figure optionsDownload full-size imageDownload as PowerPoint slideThe susceptibility of graphene versus temperature in the pure case, c  =0, (solid line) and when boron atoms are doped (dashed lines). The on-site energy is δ≈0.8tδ≈0.8t. Concentrations of boron atoms are chosen to be c=0.10, 0.20 and 0.40.Research Highlights►We study boron doping effects on density of states and susceptibility of graphene. ►We use the tight-binding model and coherent potential approximation. ►With boron doping, van-Hove singularities in the density of states become broad. ►The susceptibility changes with the amount of boron atom concentrations.